Si-VPI-5分子筛的多核固体NMR研究

磷酸铝类分子筛是近年来继Y型和ZSM七分子筛之后的第三代合成分子筛材料，其骨架由A10。和P0。四面体均匀交替地组成问．由于带负电行的A10。和带正电荷的PO。四面体数目相等，整个骨架呈电中性，所以这类分子筛本身无离子交换能力和催化活性．当用硅或某些金属离子（如Mg、Fe、Co、Zn等）对磷酸铝分子筛进行同晶取代，就会在骨架上造成电行不平衡，从而使这类分子筛具有一定的离子交换能力和酸性【习．因而对硅或金属离子在磷酸错类分子筛中取代机理的研究一直是人们感兴趣的问题问．Vpl－5是最近才合成出来的具有18圆环一维孔结构的…     

Friedel-crafts acylation of 2-methoxynaphthalene over h-beta catalysts: effect of Si/Al ratio

The acylation of 2-methoxynaphthalene with acetic anhydride was carried out over zeolite beta catalysts having various Si/Al ratios. It was found that the reaction performance is strongly dependent on the Si/Al ratio of the catalyst. The catalytic reaction features were elucidated in terms of the acidic properties of the catalysts. This revised version was published online in June 2006 with corrections to the Cover Date.     

X-射线荧光光谱法测定钛铁中的硅、锰、磷、铝

介绍用X-射线荧光光谱仪测定钛铁中Si、Mn、P、Al含量的方法,通过试验确定了合适的研磨时间、压力和保压时间,用压片法制样,建立了各元素的工作曲线,各元素的测定范围分别为Si3.00%～6.00%,Mn1.00%～3.00%,P0.030%～0.070%,Al5.00%～9.00%。通过强度测量得到测定Si、Mn、P、Al的相对标准偏差分别为0.074%、0.308%、0.383%、0.040%,精密度满足测试要求。将该方法测定结果与化学法比对,准确度满足国家标准方法分析误差的要求。     

Coating and water permeation properties of SiO2 thin films prepared by the sol-gel method on nylon-6 substrates

Nylon-6 substrates were coated with SiO₂ thin films by the sol-gel method and their water permeability coefficient was evaluated. Methyltriethoxysilane (MTES) and tetraethoxysilane (TEOS) were used as starting materials. The addition of MTES to TEOS has enabled the formation of crack-free thin films on the substrates. The thin films strongly adhered to the substrates. The water permeability coefficients of nylon-6 substrates coated with these thin films decreased with the increase in the ratio of TEOS to the total alkoxides. The pretreatment of the nylon-6 substrates with -aminopropyltriethoxysilane was found to be effective to suppress the water permeability. The water permeability was suppressed by about 40% under the optimal condition.     

The Adsorption and Thermal Decomposition of CH2CO (CD2CO) on Si(111)-7 × 7

The adsorption and thermal decomposition of ketene on Si(l 11)-7 × 7 were investigated using various surface analysis techniques. When the surface was exposed to ketene at 120 K, two CO stretching modes at 220 and 273 meV appeared in HREELS, corresponding to two adsorbed ketene states. After the sample was annealed at ?250 K, the 273 and the 80 meV peaks vanished, indicating the disappearance of one of the adsorption states by partial desorption of the adsorbate. In a corresponding TPD measurement, a desorption peak for ketene species was noted at 220 K. Annealing the sample at 450 K caused the decomposition of the adsorbate, producing CH_x and O adspecies. Further annealing of the surface at higher temperatures resulted in the breaking of the CH bond, the desorption of H and O species and the formation of Si carbide. The desorption of H at 800 K was confirmed by the appearance of the D₂ (m/e = 4) TPD peak at that temperature when CD₂CO was used instead of CH₂CO.     

Theoretical Study on the Structures and Stability of Isomers and Complex of[Si,C,O,O] Sytem

A detailed singlet potential energy surface(PES) of [Si,C,O,O] system including a van der Waals (vdW) comples SiO……CO2,eight isomers,and twelve transiton states is investigated by MP2 and QCISD(T) (single-point)methods.At the final QCISD(T)/6-311 G(2df)//MP2/6-311G(d) level with zero-point energy included,the complex SiO……CO is found to be thermodynamically and kinetically the most stable species.Although eight ismoers are located as local energy minima,they are rather unstable toward isomerization to the dissociation fragments or comples.For the reaction of silocon atoms with carbon dioxide,two competitive reaction channels are found,and the primary pathway,which leads to the products of SiO and CO fragments,is the direct oxygen-abstraction process from carbon dioxide by silicon atom with a41.16 kJ/mol reaction barrier height.Our predications are in good agreement with previous experimental and theoretical studies.     

XPS in‐depth composition study on commercial monocrystalline silicon solar cells

From large‐scale production, two monocrystalline silicon solar cells of different quality, i.e. I_SC = 3.0 A (good cell) and I_SC = 1.6 A (bad cell), have been studied by XPS combined with 4 keV Ar⁺ depth profiling. Depth profiling was carried out through the anti‐reflection coating (TiO₂), the passivation layer (SiO₂) and up into the phosphorus‐doped silicon bulk. At the solar cell surface the elemental composition is similar for both cells, although the bad one presents slightly more carbon, phosphorus and lead but less silver than the good one. During profiling, carbon and silver could be followed by XPS. It was found that the carbon content is distinguishably higher in the bad cell than in the good one. Furthermore, it was found that silver atoms have not diffused in the same way in both cells. Only the good cell presents silver atoms up into the silicon bulk. Copyright © 2003 John Wiley & Sons, Ltd.     

脱铝八面沸石的研究(Ⅳ)——异丙苯催化裂化

以脉冲微型反应技术研究了脱铝八面沸石对异丙苯的催化裂化行为,并与反应条件下表面酸性进行了关联。样品裂化活性随骨架Si/Al比增加呈山峰形变化,Si/Al=5.38时最大;反应条件下酸中心数随脱铝深度增加却单调降低。动力学数据表明,样品裂化反应速度常数与强质子酸中心数随骨架Si/Al比增加具有平行的山峰形变化规律,Si/Al比为8.87附近的样品最高。     

溅射参数对ZnO薄膜物性的影响

采用磁控溅射方法分别在ITO玻璃和硅片上成功制备了具有良好C轴取向的ZnO薄膜.并研究了溅射气压,基底温度,以及氧偏压对ZnO薄膜物性的影响,从而确定了制备ZnO薄膜的最佳溅射条件.